CMLDM8120G TR PBFREE 数据手册
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
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DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are enhancement-mode P-Channel MOSFETs,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(on) and low
theshold voltage.
MARKING CODES:
CMLDM8120:
C81
CMLDM8120G*: C8G
SOT-563 CASE
* Device is Halogen Free by design
APPLICATIONS:
FEATURES:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
•
•
•
•
Low rDS(on)
Low Threshold Voltage
Logic Level Compatible
Small SOT-563 package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
ΘJA
20
8.0
860
950
360
4.0
4.0
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
1.0
IDSS
VDS=20V, VGS=0
5.0
BVDSS
VGS=0, ID=250μA
20
24
VGS(th)
VDS=VGS, ID=250μA
0.45
0.76
VSD
VGS=0V, IS=360mA
rDS(ON)
VGS=4.5V, ID=0.95A
0.085
rDS(ON)
VGS=4.5V, ID=0.77A
0.085
rDS(ON)
VGS=2.5V, ID=0.67A
0.13
rDS(ON)
VGS=1.8V, ID=0.2A
0.19
gFS
VDS=10V, ID=0.81A
2.0
Crss
VDS=16V, VGS=0, f=1.0MHz
80
Ciss
VDS=16V, VGS=0, f=1.0MHz
200
Coss
VDS=16V, VGS=0, f=1.0MHz
60
Notes:
1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
MAX
50
500
1.0
0.9
0.15
0.142
0.20
0.24
UNITS
V
V
mA
mA
mA
A
A
mW
mW
mW
°C
°C/W
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
S
pF
pF
pF
R7 (17-October 2018)
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
ton
toff
CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
VDS=10V, VGS=4.5V, ID=1.0A
3.56
VDS=10V, VGS=4.5V, ID=1.0A
0.36
VDS=10V, VGS=4.5V, ID=1.0A
1.52
VDD=10V, VGS=4.5V, ID=0.95A, RG=6Ω
20
VDD=10V, VGS=4.5V, ID=0.95A, RG=6Ω
25
UNITS
nC
nC
nC
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
MARKING CODES:
CMLDM8120: C81
CMLDM8120G*: C8G
* Device is Halogen Free by design
R7 (17-October 2018)
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CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R7 (17-October 2018)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
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• PbSn plating options
• SPICE models
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• Custom electrical curves
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• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
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www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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